IRFD9210PBF datasheet(2/8 Pages) VISHAY

No. de pieza	IRFD9210PBF

Descripción Electrónicos	Power MOSFET

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Document Number: 91140

2

S-Pending-Rev. A, 23-Jun-08

IRFD9210, SiHFD9210

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-

120

°C/W

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 200

-

V

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = - 1 mA

-

- 0.23

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 2.0

-

- 4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 200 V, VGS = 0 V

-

- 100

µA

VDS = - 160 V, VGS = 0 V, TJ = 125 °C

-

- 500

Drain-Source On-State Resistance

RDS(on)

VGS = - 10 V

ID = - 0.24 Ab

--

3.0

Ω

Forward Transconductance

gfs

VDS = - 50 V, ID = - 0.24 A

0.27

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = - 25 V,

f = 1.0 MHz, see fig. 5

-

170

-

pF

Output Capacitance

Coss

-54

-

Reverse Transfer Capacitance

Crss

-16

-

Total Gate Charge

Qg

VGS = - 10 V

ID = - 4.0 A, VDS = - 80 V

see fig. 6 and 13b

--

8.9

nC

Gate-Source Charge

Qgs

--

2.1

Gate-Drain Charge

Qgd

--

3.9

Turn-On Delay Time

td(on)

VDD = - 100 V, ID = - 2.3 A

RG = 24 Ω, RD = 41 Ω,

see fig. 10b

-8.0

-

ns

Rise Time

tr

-12

-

Turn-Off Delay Time

td(off)

-11

-

Fall Time

tf

-13

-

Internal Drain Inductance

LD

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.0

-

nH

Internal Source Inductance

LS

-6.0

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

-

- 0.40

A

Pulsed Diode Forward Currenta

ISM

--

- 3.2

Body Diode Voltage

VSD

TJ = 25 °C, IS = - 0.40 A, VGS = 0 Vb

--

- 5.8

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = - 2.3 A, dI/dt = 100 A/µsb

-

110

220

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.56

1.1

µC

D

S

G

S

D

G

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