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IRFP26N60LPBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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IRFP26N60LPBF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91218 2 S-81264-Rev. B, 21-Jul-08 IRFP26N60L, SiHFP26N60L Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.27 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 600 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 50 µA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 16 Ab - 0.21 0.25 Ω Forward Transconductance gfs VDS = 50 V, ID = 16 A 13 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 5020 - pF Output Capacitance Coss - 450 - Reverse Transfer Capacitance Crss -34 - Effective Output Capacitance Coss eff. VGS = 0 V VDS = 0 V to 480 Vc - 230 - Effective Output Capacitance (Energy Related) Coss eff. (ER) - 170 - Total Gate Charge Qg VGS = 10 V ID = 26 A, VDS = 480 V, see fig. 7 and 15b - - 180 nC Gate-Source Charge Qgs -- 61 Gate-Drain Charge Qgd -- 85 Turn-On Delay Time td(on) VDD = 300 V, ID = 26 A, RG = 4.3 Ω,VGS = 10 V see fig. 11a and 11bb -31 - ns Rise Time tr - 110 - Turn-Off Delay Time td(off) -47 - Fall Time tf -42 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 26 A Pulsed Diode Forward Currenta ISM - - 100 Body Diode Voltage VSD TJ = 25 °C, IS = 26 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 26 A - 170 250 ns TJ = 125 °C, dI/dt = 100 A/µsb - 210 320 Body Diode Reverse Recovery Charge Qrr TJ = 25 °C, IF = 26 A, VGS = 0 Vb - 670 1000 nC TJ = 125 °C, dI/dt = 100 A/µsb - 1050 1570 Reverse Recovery Current IRRM TJ = 25 °C - 7.3 11 A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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