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SI1031R-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza SI1031R-T1-E3
Descripción Electrónicos  P-Channel 20-V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
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SI1031R-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 71171
S-81543-Rev. C, 07-Jul-08
Vishay Siliconix
Si1031R/X
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.40
- 1.2
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 2.8 V
± 0.5
± 1.0
µA
VDS = 0 V, VGS = ± 4.5 V
± 1.0
± 2.0
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V
- 1
- 500
nA
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
- 10
µA
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
- 200
mA
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 150 mA
8
Ω
VGS = - 2.5 V, ID = - 125 mA
12
VGS = - 1.8 V, ID = - 100 mA
15
VGS = - 1.5 V, ID = - 30 mA
20
Forward Transconductancea
gfs
VDS = - 10 V, ID = 150 mA
0.4
S
Diode Forward Voltagea
VSD
IS = - 150 mA, VGS = 0 V
- 1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA
1500
pC
Gate-Source Charge
Qgs
150
Gate-Drain Charge
Qgd
450
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 65 Ω
ID ≅ - 150 mA, VGEN = - 4.5 V, RG = 10 Ω
55
ns
Rise Time
tr
30
Turn-Off Delay Time
td(off)
60
Fall Time
tf
30
Output Characteristics
0.0
0.1
0.2
0.3
0.4
0.5
0123456
VGS = 5 thru 2.5 V
2 V
VDS - Drain-to-Source Voltage (V)
1.8 V
Transfer Characteristics
0
100
200
300
400
500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
TJ = - 55 °C
125 °C
25 °C
VGS - Gate-to-Source Voltage (V)


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