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SI1553DL Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI1553DL Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page Si1553DL Vishay Siliconix www.vishay.com 2-2 Document Number: 71078 S-21374—Rev. D, 12-Aug-02 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static VDS = VGS, ID = 250 mA N-Ch 0.6 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA P-Ch -0.6 V " N-Ch "100 Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V P-Ch "100 nA VDS = 16 V, VGS = 0 V N-Ch 1 VDS = -16 V, VGS = 0 V P-Ch -1 m Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C N-Ch 5 mA VDS = -16 V, VGS = 0 V, TJ = 85_C P-Ch -5 VDS w 5 V, VGS = 4.5 V N-Ch 1.0 On-State Drain Currenta ID(on) VDS p -5 V, VGS = -4.5 V P-Ch -1.0 A VGS = 4.5 V, ID = 0.66 A N-Ch 0.320 0.385 VGS = -4.5 V, ID = -0.41 A P-Ch 0.850 0.995 W Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 0.40 A N-Ch 0.560 0.630 W VGS = -2.5 V, ID = -0.25 A P-Ch 1.4 1.800 VDS = 10 V, ID = 0.66 A N-Ch 1.5 Forward Transconductancea gfs VDS = -10 V, ID = -0.41 A P-Ch 0.8 S IS = 0.23 A, VGS = 0 V N-Ch 0.8 1.2 Diode Forward Voltagea VSD IS = -0.23 A, VGS = 0 V P-Ch -0.8 -1.2 V Dynamicb N-Ch 0.8 1.2 Total Gate Charge Qg N-Channel P-Ch 1.2 1.8 N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.66 A N-Ch 0.06 Gate-Source Charge Qgs P-Channel P-Ch 0.45 nC VDS = -10 V, VGS = -4.5 V, ID = -0.41 A N-Ch 0.30 Gate-Drain Charge Qgd P-Ch 0.25 N-Ch 10 20 Turn-On Delay Time td(on) P-Ch 7.5 15 N-Channel W N-Ch 16 30 Rise Time tr VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W P-Ch 20 40 P-Channel W N-Ch 10 20 Turn-Off Delay Time td(off) P-Channel VDD = -10 V, RL = 20 W I ^ -0.5 A, V = -4.5 V, R = 6 W P-Ch 8.5 17 ns ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W N-Ch 10 20 Fall Time tf P-Ch 12 24 Source-Drain IF = 0.23 A, di/dt = 100 A/ms N-Ch 20 40 Source-Drain Reverse Recovery Time trr IF = -0.23 A, di/dt = 100 A/ms P-Ch 25 40 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. |
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