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SI3475DV Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI3475DV Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 74249 S-62239–Rev. A, 06-Nov-06 Vishay Siliconix Si3475DV Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 200 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 240 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 6.2 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2 - 4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 200 V, VGS = 0 V - 1 µA VDS = - 200 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 2 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 0.9 A 1.34 1.61 Ω VGS = - 6 V, ID = - 0.7 A 1.37 1.65 Forward Transconductancea gfs VDS = - 10 V, ID = - 0.9 A 3.5 S Dynamicb Input Capacitance Ciss VDS = - 50 V, VGS = 0 V, f = 1 MHz 500 pF Output Capacitance Coss 26 Reverse Transfer Capacitance Crss 18 Total Gate Charge Qg VDS = - 100 V, VGS = - 10 V, ID = - 1 A 11.7 18 nC VDS = - 100 V, VGS = - 6 V, ID = - 1 A 7.8 12 Gate-Source Charge Qgs 2 Gate-Drain Charge Qgd 3.7 Gate Resistance Rg f = 1 MHz 9 14 Ω Turn-On Delay Time td(on) VDD = - 100 V, RL = 100 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 914 ns Rise Time tr 11 18 Turn-Off DelayTime td(off) 28 42 Fall Time tf 12 18 Turn-On Delay Time td(on) VDD = - 100 V, RL = 100 Ω ID ≅ - 1 A, VGEN = - 6 V, Rg = 1 Ω 14 21 Rise Time tr 29 44 Turn-Off DelayTime td(off) 23 35 Fall Time tf 14 21 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 0.95 A Pulse Diode Forward Current ISM - 3 Body Diode Voltage VSD IS = - 1 A, VGS = 0 V - 0.81 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 1.2 A, di/dt = 100 A/µs, TJ = 25 °C 84 130 ns Body Diode Reverse Recovery Charge Qrr 235 350 nC Reverse Recovery Fall Time ta 46 ns Reverse Recovery Rise Time tb 38 |
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