SI4340CDY datasheet(4/12 Pages) VISHAY

No. de pieza	SI4340CDY

Descripción Electrónicos	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

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Document Number: 68398

S-81547-Rev. B, 07-Jul-08

Vishay Siliconix

Si4340CDY

New Product

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS =10thru 4 V

VGS =3 V

VGS =2 V

0.005

0.007

0.009

0.011

0.013

0.015

010

20

30

40

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

0

2

4

6

8

10

0

5

10

15

20

25

ID =11.5A

Qg - Total Gate Charge (nC)

VDS =16 V

VDS =10 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC = 25 °C

TC = - 55 °C

Crss

0

300

600

900

1200

1500

0

5

10

15

20

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VGS =10 V,4.5 V

ID =11.5A

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Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
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