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SI5509DC Datasheet(PDF) 9 Page - Vishay Siliconix |
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SI5509DC Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 12 page Si5509DC Vishay Siliconix New Product Document Number: 73629 S–60417—Rev. A, 20-Mar-06 www.vishay.com 9 TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) PCHANNEL ID = 3.9 A 0.0 0.1 0.2 0.3 12345 On-Resistance vs. Gate-to-Source Voltage VGS – Gate-to-Source Voltage (V) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 –50 –25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ – Temperature (_C) TA = 25 _C TA = 125 _C Safe Operating Area, Junction-to-Case 100 1 0.1 1 10 100 0.01 10 0.1 Limited by rDS(on) TA = 25 _C Single Pulse 10 ms 100 ms dc 1 s 10 s VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 0.001 Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) 0.0 0.4 0.8 1.2 0.00 0.01 0.10 1.00 10.00 100.00 TA = 25 _C TA = 125 _C 0 30 50 10 20 Single Pulse Power Time (sec) 40 1 100 600 10 10–1 10–2 10–4 10–3 |
Número de pieza similar - SI5509DC_08 |
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Descripción similar - SI5509DC_08 |
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