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SI5509DC Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SI5509DC
Descripción Electrónicos  N- and P-Channel 20-V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI5509DC Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFETs
APPLICATIONS
D Complementary MOSFET for Portable
Devices
– Ideal for Buck–Boost Circuits
RoHS
COMPLIANT
Si5509DC
Vishay Siliconix
New Product
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
N Channel
20
0.052 at VGS = 4.5 V
6.1a
39nc
N-Channel
20
0.084 at VGS = 2.5 V
4.8a
3.9 nc
P Channel
20
0.090 at VGS = –4.5 V
–4.8a
38nc
P-Channel
–20
0.160 at VGS = –2.5 V
–3.6a
3.8 nc
Ordering Information: Si5509DC-T1–E3 (Lead (Pb)–Free)
N-Channel MOSFET
D1
G1
S1
S2
G2
D2
P-Channel MOSFET
Marking Code
ED
XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
1206-8 ChipFET
r
S1
G1
S2
G2
D1
D1
D2
D2
1
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
–20
V
Gate-Source Voltage
VGS
"12
V
TC = 25 _C
6.1a
–4.8a
Continuous Drain Current (TJ = 150 _C)
TC = 70 _C
ID
4.9a
–3.8a
Continuous Drain Current (TJ = 150 _C)
TA = 25 _C
ID
5.0b, c
–3.9b, c
TA = 70 _C
3.9b, c
–3.1b, c
A
Pulsed Drain Current
IDM
10
–15
A
Source Drain Current Diode Current
TC = 25 _C
IS
3.7
–3.7
Source-Drain Current Diode Current
TA = 25 _C
IS
1.7b, c
–1.7b, c
TC= 25 _C
4.5
4.5
Maximum Power Dissipation
TC= 70 _C
PD
2.88
2.88
W
Maximum Power Dissipation
TA = 25 _C
PD
2.1b, c
2.1b, c
W
TA = 70 _C
1.33b, c
1.33b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
Soldering Recommendations (Peak Temperature)d, e
260
_C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambientb, f
t
v 5 sec
RthJA
50
60
50
60
_C/W
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
30
40
30
40
_C/W
Notes
a.
Based on TC = 25 _C.
b.
Surface Mounted on 1” x 1” FR4 Board.
c.
t = 5 sec
d.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
e.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f.
Maximum under steady state conditions is 90
_C/W for both channels.


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