Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

SI5515CDC-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SI5515CDC-T1-E3
Descripción Electrónicos  N- and P-Channel 20-V (D-S) MOSFET
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI5515CDC-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix

  SI5515CDC-T1-E3 Datasheet HTML 1Page - Vishay Siliconix SI5515CDC-T1-E3 Datasheet HTML 2Page - Vishay Siliconix SI5515CDC-T1-E3 Datasheet HTML 3Page - Vishay Siliconix SI5515CDC-T1-E3 Datasheet HTML 4Page - Vishay Siliconix SI5515CDC-T1-E3 Datasheet HTML 5Page - Vishay Siliconix SI5515CDC-T1-E3 Datasheet HTML 6Page - Vishay Siliconix SI5515CDC-T1-E3 Datasheet HTML 7Page - Vishay Siliconix SI5515CDC-T1-E3 Datasheet HTML 8Page - Vishay Siliconix SI5515CDC-T1-E3 Datasheet HTML 9Page - Vishay Siliconix Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 12 page
background image
Vishay Siliconix
Si5515CDC
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFETs
100 % Rg Tested
APPLICATIONS
Load Switch for Portable Devices
Ordering Information: Si5515CDC-T1-E3 (Lead (Pb)-free)
Marking Code
EH
XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
S1
G1
S2
G2
D1
D1
D2
D2
1
1206-8 Chip-FET ®
N-Channel MOSFET
D1
G1
S1
S2
G2
D2
P-Channel MOSFET
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
- 20
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
4g
- 4g
A
TC = 70 °C
4g
- 3.8
TA = 25 °C
4b, c, g
- 3.1b, c
TA = 70 °C
4b, c, g
- 2.5b, c
Pulsed Drain Current
IDM
20
- 10
Source Drain Current Diode Current
TC = 25 °C
IS
2.6
- 2.6
TA = 25 °C
1.7b, c
- 1.7b, c
Maximum Power Dissipation
TC = 25 °C
PD
3.1
3.1
W
TC = 70 °C
2.0
2.0
TA = 25 °C
2.1b, c
1.3b, c
TA = 70 °C
1.3b, c
0.8b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
P-Channel
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, f
t
≤ 5 s
RthJA
50
60
77
95
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30
40
33
40
RoHS
COMPLIANT
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
N-Channel
20
0.036 at VGS = 4.5 V
4g
6.5 nC
0.041 at VGS = 2.5 V
4g
0.050 at VGS = 1.8 V
4g
P-Channel
- 20
0.100 at VGS = - 4.5 V
- 4g
6.2 nC
0.120 at VGS = - 2.5 V
- 4g
0.156 at VGS = - 1.8 V
- 3.8


Número de pieza similar - SI5515CDC-T1-E3

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI5515CDC-T1-E3 VISHAY-SI5515CDC-T1-E3 Datasheet
276Kb / 16P
   N- and P-Channel 20 V (D-S) MOSFET
Rev. B, 08-Mar-10
More results

Descripción similar - SI5515CDC-T1-E3

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI3588DV VISHAY-SI3588DV Datasheet
59Kb / 7P
   N- and P-Channel 20-V (D-S) MOSFET
Rev. A, 23-Oct-00
SI3586DV VISHAY-SI3586DV Datasheet
362Kb / 4P
   N- and P-Channel 20-V (D-S) MOSFET
Rev. B, 16-May-05
SI1553CDL VISHAY-SI1553CDL Datasheet
262Kb / 16P
   N- and P-Channel 20 V (D-S) MOSFET
Rev. A, 02-May-11
SI3586DV VISHAY-SI3586DV_09 Datasheet
212Kb / 13P
   N- and P-Channel 20-V (D-S) MOSFET
Rev. D, 12-Oct-09
logo
Vaishali Semiconductor
SI3585DV VAISH-SI3585DV Datasheet
67Kb / 7P
   N- and P-Channel 20-V (D-S) MOSFET
logo
Vishay Siliconix
SI4511DY VISHAY-SI4511DY Datasheet
77Kb / 8P
   N- and P-Channel 20-V (D-S) MOSFET
Rev. B, 09-Aug-04
SI5509DC VISHAY-SI5509DC_08 Datasheet
134Kb / 12P
   N- and P-Channel 20-V (D-S) MOSFET
Rev. A, 20-Mar-06
SI5515CDC VISHAY-SI5515CDC_10 Datasheet
276Kb / 16P
   N- and P-Channel 20 V (D-S) MOSFET
Rev. B, 08-Mar-10
SIA519EDJ VISHAY-SIA519EDJ Datasheet
275Kb / 14P
   N- and P-Channel 20-V (D-S) MOSFET
Rev. B, 14-Dec-09
SI4511DY VISHAY-SI4511DY_V01 Datasheet
142Kb / 9P
   N- and P-Channel 20-V (D-S) MOSFET
01-Jan-2022
logo
VBsemi Electronics Co.,...
AO7600 VBSEMI-AO7600 Datasheet
1Mb / 9P
   N- and P- Channel 20 V (D-S) MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com