TSHF5210_08 datasheet(3/5 Pages) VISHAY

No. de pieza	TSHF5210

Descripción Electrónicos	High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Document Number: 81313

For technical questions, contact: emittertechsupport@vishay.com

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Rev. 1.2, 04-Sep-08

177

TSHF5210

High Speed Infrared Emitting Diode, RoHS

Compliant, 890 nm, GaAlAs Double Hetero

Vishay Semiconductors

BASIC CHARACTERISTICS

Tamb = 25 °C, unless otherwise specified

Fig. 3 - Pulse Forward Current vs. Pulse Duration

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 5 - Radiant Intensity vs. Forward Current

Fig. 6 - Radiant Power vs. Forward Current

Fig. 7 - Relative Radiant Power vs. Wavelength

Fig. 8 - Relative Radiant Intensity vs. Angular Displacement

100

1000

0.01

0.1

1.0

10

100

t

P - Pulse Duration (ms)

16031

t

P/T = 0.01

0.05

0.2

0.5

0.1

0.02

T

amb < 50 °C

18873

1000

100

10

1

V

F - Forward Voltage (V)

02

4

t

P = 100 µs

t

P/T = 0.001

13

1

10

100

1000

10 000

1

10

100

1000

21213

I

F - Forward Current (mA)

t

P = 0.1 ms

0.1

1

10

100

1000

110

100

1000

16971

IF - Forward Current (mA)

800

900

λ - Wavelength (nm)

1000

20082

0

0.25

0.5

0.75

1.0

1.25

0.4

0.2

0

15989

0.6

0.9

0.8

0°

30°

10°

20°

40°

50°

60°

70°

80°

0.7

1.0

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