Document Number: 81074

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

Rev. 1.6, 05-Sep-08

221

TSKS5400S

Infrared Emitting Diode, RoHS Compliant,

950 nm, GaAs

Vishay Semiconductors

Fig. 5 - Radiant Intensity vs. Forward Current

Fig. 6 - Radiant Power vs. Forward Current

Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature

Fig. 8 - Relative Radiant Power vs. Wavelength

Fig. 9 - Relative Radiant Intensity vs. Angular Displacement

94 7913

0.01

0.1

1

100

10

t/T= 0.001

p

t= 100 µs

p

0.1

1

10

100

110

100

1000

13718

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

14348

- 45 - 30 - 15

15

03045607590

900

950

0

0.25

0.5

0.75

1.0

1.25

- Wavelength (nm)

1000

94 7994

I

λ

0.4

0.2

0

0.2

0.4

0.6

14349

0.6

0.9

0.8

0

°

30

°

10°

20

40

°

50

°

60

°

70

°

80

°

0.7

1.0

°