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ST173S12PFK1PBF Datasheet(PDF) 7 Page - Vishay Siliconix |
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ST173S12PFK1PBF Datasheet(HTML) 7 Page - Vishay Siliconix |
7 / 9 page Document Number: 94367 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 29-Apr-08 7 ST173SPbF Series Inverter Grade Thyristors (Stud Version), 175 A Vishay High Power Products Fig. 14 - Maximum On-State Energy Power Loss Characteristics Fig. 15 - Gate Characteristics Pulse Basewidth (µs) 20 joules per pulse 0.5 0.3 0.2 7.5 10 100 1000 10 000 10 100 1000 10 000 t p ST173S Series Sinusoidal pulse 0.1 2 100 000 1 4 Pulse Basewidth (µs) 10 100 1000 10 000 10 100 1000 10 000 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse t p ST173S Series Rectangular pulse dI/dt = 50 A/µs 0.3 0.4 0.1 1 10 100 0.001 Instantaneous Gate Current (A) 0.01 0.1 1 10 100 (b) V GD I GD (1) (2) (3) Device: ST173S Series (4) Frequency limited by P G(AV) (1) P GM = 10 W, tp = 20 ms (2) P GM = 20 W, tp = 10 ms (3) P GM = 40 W, tp = 5 ms (4) P GM = 60 W, tp = 3.3 ms Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; t r ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω t r ≤ 1 µs (a) |
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