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ST183C08CHK1P Datasheet(PDF) 7 Page - Vishay Siliconix |
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ST183C08CHK1P Datasheet(HTML) 7 Page - Vishay Siliconix |
7 / 9 page Document Number: 94368 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 30-Apr-08 7 ST183CPbF Series Inverter Grade Thyristors (Hockey PUK Version), 370 A Vishay High Power Products Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-State Energy Power Loss Characteristics Fig. 17 - Gate Characteristics 10 10 100 1000 10 000 100 1000 10 000 Pulse Basewidth (µs) 3000 ST183C..C Series Trapezoidal pulse T C = 40 °C dI/dt = 100 A/µs t p Snubber circuit R s = 47 Ω C s = 0.22 µF V D = 80 % VDRM 10 000 2500 1500 1000 500 400 200 100 50 Hz 5000 10 10 100 1000 10 000 100 1000 10 000 Pulse Basewidth (µs) 3000 ST183C..C Series Trapezoidal pulse T C = 55 °C dI/dt = 100 A/µs t p Snubber circuit R s = 47 Ω C s = 0.22 µF V D = 80 % VDRM 10 000 5000 2500 1500 1000 500 400 200 100 50 Hz Pulse Basewidth (µs) 20 joules per pulse 0.5 0.3 0.2 10 100 1000 10 000 10 100 1000 10 000 t p ST183C..C Series Sinusoidal pulse 0.1 2 100 000 1 4 10 Pulse Basewidth (µs) 10 100 1000 10 000 10 100 1000 10 000 100 000 0.1 0.2 0.5 2 1 4 10 20 joules per pulse t p ST183C..C Series Rectangular pulse dI/dt = 50 A/µs 0.3 0.1 1 10 100 0.001 Instantaneous Gate Current (A) 0.01 0.1 1 10 100 (b) V GD I GD (1) (2) (3) Device: ST183C..C Series (4) Frequency limited by P G(AV) (1) P GM = 10 W, tp = 20 ms (2) P GM = 20 W, tp = 10 ms (3) P GM = 40 W, tp = 5 ms (4) P GM = 60 W, tp = 3.3 ms Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; t r ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω t r ≤ 1 µs (a) |
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