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74LVT574DB Datasheet(PDF) 4 Page - NXP Semiconductors |
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74LVT574DB Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 16 page 74LVT_LVTH574_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 11 September 2008 4 of 16 NXP Semiconductors 74LVT574; 74LVTH574 3.3 V octal D-type flip-flop; 3-state 6. Functional description 6.1 Function table [1] H = HIGH voltage level; L = LOW voltage level; ↑ = LOW-to-HIGH clock transition; h = HIGH voltage level one setup time prior to the LOW-to-HIGH clock transition; l = LOW voltage level one setup time prior to the LOW-to-HIGH clock transition; Z = high-impedance OFF-state; NC = no change; X = don’t care. 7. Limiting values [1] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. [2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. [3] For SO20 packages: above 70 ˚C derate linearly with 8 mW/K. For SSOP20 and TSSOP20 packages: above 60 ˚C derate linearly with 5.5 mW/K. For DHVQFN20 packages: above 60 ˚C derate linearly with 4.5 mW/K. Table 3. Function table [1] Operating mode Control Input Internal register Output OE CP Dn Qn Load and read register L ↑ lL L hH H Hold L NC X NC NC Disable outputs H X X NC Z Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +4.6 V VI input voltage [1] −0.5 +7.0 V VO output voltage output in OFF-state or HIGH-state [1] −0.5 +7.0 V IIK input clamping current VI <0V - −50 mA IOK output clamping current VO <0V - −50 mA IO output current output in LOW-state - 128 mA output in HIGH-state - −64 mA Tstg storage temperature −65 +150 °C Tj junction temperature [2] - 150 °C Ptot total power dissipation Tamb = -40 ˚C to +85 ˚C - 500 mW |
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