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TP2104N3 Datasheet(PDF) 2 Page - Supertex, Inc |
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TP2104N3 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 4 page 2 TP2104 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD R gen 0V -10V Switching Waveforms and Test Circuit Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR*IDRM @ T A = 25°C °C/W °C/W SOT-23 -0.16A -0.8A 0.36W 200 350 -0.16A -0.8A TO-92 -0.25A -1.0A 0.74W 125 170 -0.25A -1.0A * I D (continuous) is limited by max rated Tj. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage -40 V VGS = 0V, ID = -1.0mA VGS(th) Gate Threshold Voltage -1.0 -2.0 V VGS = VDS, ID = -1.0mA ∆VGS(th) Change in V GS(th) with Temperature 5.8 6.5 mV/°CVGS = VDS, ID = -1.0mA IGSS Gate Body Leakage -1.0 -100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAVGS = 0V, VDS = Max Rating -1 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C I D(ON) ON-State Drain Current -0.6 A V GS = -10V, VDS = -25V RDS(ON) 10.0 Ω VGS = -4.5V, ID = -50mA 6.0 Ω VGS = -10V, ID = -0.5A ∆RDS(ON) Change in R DS(ON) with Temperature 0.55 1.0 %/°CVGS = -10V, ID = -0.5A GFS Forward Transconductance 150 200 m VDS = -25V, ID = -0.5A CISS Input Capacitance 35 60 C OSS Common Source Output Capacitance 22 30 pF CRSS Reverse Transfer Capacitance 8 10 t d(ON) Turn-ON Delay Time 4 6 t r Rise Time 4 8 td(OFF) Turn-OFF Delay Time 5 9 t f Fall Time 5 8 V SD Diode Forward Voltage Drop -1.2 -2.0 V V GS = 0V, ISD = -0.5A trr Reverse Recovery Time 400 ns VGS = 0V, ISD = -0.5A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Static Drain-to-Source ON-State Resistance VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ns I D = -0.5A RGEN = 25Ω |
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