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TC1173-3.3VUA Datasheet(PDF) 2 Page - TelCom Semiconductor, Inc

No. de pieza TC1173-3.3VUA
Descripción Electrónicos  300mA CMOS LDO with Shutdown, ERROR Output and Bypass
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Fabricante Electrónico  TELCOM [TelCom Semiconductor, Inc]
Página de inicio  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC1173-3.3VUA Datasheet(HTML) 2 Page - TelCom Semiconductor, Inc

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2
TC1173
300mA CMOS LDO With Shutdown,
ERROR Output, And Bypass
TC1173-2
2/2/00
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .............................................................. 6.5V
Output Voltage ........................... (VSS – 0.3) to (VIN + 0.3)
Power Dissipation .................... Internally Limited (Note 7)
Operating Temperature .................... – 40
°C < TJ < 125°C
Storage Temperature ............................ – 65
°C to +150°C
Maximum Voltage on Any Pin ............ VIN +0.3V to – 0.3V
Lead Temperature (Soldering, 10 Sec.) ................ +300
°C
*Absolute Maximum Ratings indicate device operation limits beyond dam-
age may occur. Device operation beyond the limits listed in
Electrical
Characteristics is not recommended.
ELECTRICAL CHARACTERISTICS: VIN = VOUT + 1V, IL = 0.1µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted.
BOLDFACE type specifications apply for junction temperatures of – 40
°C to +125°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VIN
Input Operating Voltage
6.0
V
IOUTMAX
Maximum Output Current
300
——
mA
VOUT
Output Voltage
Note 1
VR ± 0.5%
V
VR - 2.5%
VR + 2.5%
∆VOUT/∆TVOUT Temperature Coefficient
Note 2
ppm/
°C
40
∆VOUT/∆VIN
Line Regulation
(VR + 1V) < VIN < 6V
0.05
0.35
%
∆VOUT/VOUT
Load Regulation
IL = 0.1mA to IOUTMAX (Note 3)
0.5
2.0
%
VIN – VOUT
Dropout Voltage (Note 4)
IL = 0.1mA
20
30
mV
IL = 100mA
80
160
IL = 300mA
240
480
ISS1
Supply Current
SHDN = VIH
—50
90
µA
ISS2
Shutdown Supply Current
SHDN = 0V
0.05
0.5
µA
PSRR
Power Supply Rejection Ratio
FRE ≤ 1kHz
60
dB
IOUTSC
Output Short Circuit Current
VOUT = 0V
550
650
mA
∆VOUT∆PD
Thermal Regulation
Note 5
0.04
V/W
eN
Output Noise
F = 1kHz, COUT = 1µF,
260
nV/
√Hz
RLOAD = 50Ω
SHDN Input
VIH
SHDN Input High Threshold
45
——
%VIN
VIL
SHDN Input Low Threshold
15
%VIN
ERROR Output
VMIN
Minimum Operating Voltage
1.0
V
VOL
Output Logic Low Voltage
1mA Flows to ERROR
400
mV
VTH
ERROR Threshold Voltage
0.95 x VR
—V
VOL
ERROR Positive Hysteresis
Note 7
50
mV
NOTES: 1. VR is the user-programmed regulator output voltage setting.
2. TC VOUT = (VOUTMAX – VOUTMIN) x 10
6
VOUT x ∆T
3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA
to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential.
5. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10msec.
6. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature, and the
thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see
Thermal Considerations section of this data sheet for more details.
7.
Hysteresis voltage is referenced to VR.


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