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KDB7045L Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDB7045L Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source 1gate 2drain 3 source N-Channel Logic Level PowerTrench MOSFET KDB7045L Features 100 A, 30 V. RDS(ON) = 0.0045 @VGS =10V RDS(ON) = 0.006 @VGS =4.5 V Critical DC electrical parameters specified at elevated temperature Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor High performance trench technology for extremely low RDS(ON) 175 maximum junction temperature rating Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGS 20 V 100 75 Drain Current Pulsed 300 A Power dissipation @ TC=25 PD 125 W Derate above 25 PD 0.85 W/ Operating and Storage Temperature TJ,TSTG -65to175 Thermal Resistance Junction to Case R JC 1.2 /W Thermal Resistance Junction to Ambient R JA 62.5 /W ID Drain Current Continuous A |
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