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2SK2796S Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza 2SK2796S
Descripción Electrónicos  Silicon N-Channel MOSFET
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK2796S Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SK2796S Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
IC
www.kexin.com.cn
1
MOSFET
SMD Type
2.3
0.60+0.1
-0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4.60+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.127
max
TO-252
Unit: mm
1Gate
2Drain
3Source
Silicon N-Channel MOSFET
2SK2796S
Features
Low on-resistance
RDS =0.12
typ.
High speed switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
20
V
ID
5A
Idp *20
A
Power dissipation
PD
20
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
*PW
10
s,Duty Cycle
1%
Drain current
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain source breakdown voltage
VDSS
ID=10mA,VGS=0V
60
V
Drain cut-off current
IDSS
VDS=60V,VGS=0
10
A
Gate leakage current
IGSS
VGS=
16V,VDS=0
10
A
Gate to source cutoff voltage
VGS(off)
VDS=10V,ID=1mA
1.0
2.0
V
Forward transfer admittance
Yfs
VDS=10V,ID=3A
2.5
4.0
S
VGS=10V,ID=3A
0.12
0.16
VGS=4V,ID=3A
0.16
0.25
Input capacitance
Ciss
180
pF
Output capacitance
Coss
90
pF
Reverse transfer capacitance
Crss
30
pF
Turn-on delay time
ton
9ns
Rise time
tr
25
ns
Turn-off delay time
toff
35
ns
Fall time
tf
55
ns
VDS=10V,VGS=0,f=1MHZ
ID=3A,VGS(on)=10V,RL=10
Drain to source on-state resistance
RDS(on)


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