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2SJ598 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SJ598 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type IC www.kexin.com.cn 1 MOSFET SMD Type 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1Gate 2Drain 3Source MOS Field Effect Transistor 2SJ598 Features Low on-resistance RDS(on)1 = 130 m MAX. (VGS =-10 V, ID =-6A) RDS(on)2 = 190 m MAX. (VGS =-4.0V,ID =-6 A) Low Ciss:Ciss = 720 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 V Drain current (DC) ID 12 A Drain current(pulse) * ID 30 A Power dissipation PD 23 W Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s, duty cycle 1% |
Número de pieza similar - 2SJ598 |
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Descripción similar - 2SJ598 |
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