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2SD1620 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1620 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 www.kexin.com.cn NPN Epitaxial Planar Silicon Transistor 2SD1620 Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high current. Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6V Collector current IC 3A Collector current (pulse) ICP 5A PC 500 mW PC *1.3 W Junction temperature Tj 150 Storage temperature Tstg -55to+150 * Mounted on ceramic board(250mm2×0.8mm) Collector dissipation Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB =20V, IE=0 100 nA Emitter cutoff current IEBO VEB =4V, IC=0 100 nA DC current gain hFE VCE =2V , IC = 3 A 140 210 Gain bandwidth product fT VCE =10V , IC = 50 mA 200 MHz Output capacitance Cob VCB = 10 V , f = 1.0MHz 30 pF Collector-emitter saturation voltage VCE(sat) IC =3A , IB =60mA 0.3 0.4 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE =0 30 V Collector-emitter breakdown voltage V(BR)CEX IC =1mA , VBE =3V 20 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA , RBE = 10 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC =0 6 V |
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