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KDB3632 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDB3632 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type MOSFET 1 www.kexin.com.cn 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source N-Channel PowerTrench MOSFET KDB3632(FDB3632) Features rDS(ON) =7.5m (Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current-Continuous TC 111 80 A TA=25 12 A Power dissipation 310 W Derate above 25 2.07 W/ Thermal Resistance Junction to Ambient RèJA 43 /W Thermal Resistance, Junction-to-Case RèJC 0.48 /W Channel temperature Tch 175 Storage temperature Tstg -55to+175 PD ID |
Número de pieza similar - KDB3632 |
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Descripción similar - KDB3632 |
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