2SK2415 datasheet(1/1 Pages) KEXIN

No. de pieza	2SK2415

Descripción Electrónicos	MOS Field Effect Transistor

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

www.kexin.com.cn

1

MOSFET

SMD Type

2.3

0.60+0.1

-0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4.60+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.127

max

TO-252

Unit: mm

1Gate

2Drain

3Source

MOS Field Effect Transistor

2SK2415

Features

Low On-Resistance

RDS(on)1 =0.10

MAX. (@ VGS =10V, ID =4.0A)

RDS(on)2 =0.15

MAX. (@ VGS =4V, ID =4.0 A)

Low Ciss Ciss = 570 pF TYP.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Drain to source voltage

VDSS

60

V

Gate to source voltage

VGSS

20

V

ID

8.0

A

Idp *

32

A

Power dissipation

PD

20

W

Channel temperature

Tch

150

Storage temperature

Tstg

-55to+150

*PW

10

s,Duty Cycle

1%

Drain current

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain cut-off current

IDSS

VDS=60V,VGS=0

10

A

Gate leakage current

IGSS

VGS=

20V,VDS=0

10

A

Gate to source cutoff voltage

VGS(off)

VDS=10V,ID=1mA

1.0

1.6

2.0

V

Forward transfer admittance

Yfs

VDS=10V,ID=4A

5.0

8.4

S

VGS=10V,ID=4A

0.07

0.10

VGS=4V,ID=4A

0.10

0.15

Input capacitance

Ciss

570

pF

Output capacitance

Coss

290

pF

Reverse transfer capacitance

Crss

75

pF

Turn-on delay time

ton

5ns

Rise time

tr

60

ns

Turn-off delay time

toff

75

ns

Fall time

tf

40

ns

VDS=10V,VGS=0,f=1MHZ

Drain to source on-state resistance

RDS(on)

ID=4A,VGS(on)=10V,RG=10

,VDD=30V

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2SK2415 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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