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IRF630 Datasheet(PDF) 2 Page - Advanced Power Electronics Corp.

No. de pieza IRF630
Descripción Electrónicos  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Fabricante Electrónico  A-POWER [Advanced Power Electronics Corp.]
Página de inicio  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

IRF630 Datasheet(HTML) 2 Page - Advanced Power Electronics Corp.

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Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
200
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.4A
-
-
0.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5.4A
-
4.2
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=200V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (Tj=125
oC)
VDS=160V, VGS=0V
-
-
250
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Qg
Total Gate Charge
3
ID=5.9A
-
25
45
nC
Qgs
Gate-Source Charge
VDS=160V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
14
-
nC
td(on)
Turn-on Delay Time
3
VDD=100V
-
10
-
ns
tr
Rise Time
ID=5.9A
-
29
-
ns
td(off)
Turn-off Delay Time
RG=12Ω,VGS=10V
-
32
-
ns
tf
Fall Time
RD=16Ω
-24
-
ns
Ciss
Input Capacitance
VGS=0V
-
630
1010
pF
Coss
Output Capacitance
VDS=25V
-
210
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
2.4
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
3
Tj=25℃, IS=9.0A, VGS=0V
-
-
1.5
V
trr
Reverse Recovery Time
3
IS=5.9A, VGS=0V,
-
225
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2.2
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
IRF630


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