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IRF630 Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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IRF630 Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 4 page Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 200 - - V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.4A - - 0.4 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=5.4A - 4.2 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=200V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=125 oC) VDS=160V, VGS=0V - - 250 uA IGSS Gate-Source Leakage VGS=±20V - - ±100 nA Qg Total Gate Charge 3 ID=5.9A - 25 45 nC Qgs Gate-Source Charge VDS=160V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 14 - nC td(on) Turn-on Delay Time 3 VDD=100V - 10 - ns tr Rise Time ID=5.9A - 29 - ns td(off) Turn-off Delay Time RG=12Ω,VGS=10V - 32 - ns tf Fall Time RD=16Ω -24 - ns Ciss Input Capacitance VGS=0V - 630 1010 pF Coss Output Capacitance VDS=25V - 210 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 3 Tj=25℃, IS=9.0A, VGS=0V - - 1.5 V trr Reverse Recovery Time 3 IS=5.9A, VGS=0V, - 225 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2.2 - uC Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25 oC , V DD=50V , L=1mH , RG=25Ω 3.Pulse test THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. IRF630 |
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