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2SC1953 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1953 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1953 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA;IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=30mA ;IB=3mA 1 V ICBO Collector cut-off current VCB=100V; IE=0 1 μA hFE DC current gain IC=10mA ; VCE=5V 130 330 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 3 pF fT Transition frequency IE=-10mA ; VCB=10V 70 MHz hFE Classifications R S 130-220 185-330 |
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