|
| 2SC3852 |
|
||
|
ISC |
|
2 page
INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2SC3852 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA 0.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 0.5A; VCE= 4V 200 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF fT Current-Gain—Bandwidth Product IE= -0.2A; VCE= 12V 15 MHz Switching Times ton Turn-On Time 0.8 μs tstg Storage Time 3.0 μs tf Fall Time IC= 1A; IB1= 15mA; IB2= -30mA; VCC= 20V; RL= 20Ω 1.2 μs |
|
Número de Pieza relacionado |
| Número de Pieza | Descripción de Componentes | Html View | Fabricante |
| 2N6059_03 | SILICON NPN POWER DARLINGTON TRANSISTOR | 1 2 3 4 | STMicroelectronics |
| BU941T | isc Silicon NPN Power Transistor | 1 2 3 | Inchange Semiconductor Company Limited |
| BU910 | isc Silicon NPN Darlington Power Transistor | 1 2 | Inchange Semiconductor Company Limited |
| BUW132H | isc Silicon NPN Power Transistor | 1 2 | Inchange Semiconductor Company Limited |
| TIP100 | isc Silicon NPN Darlington Power Transistor | 1 2 | Inchange Semiconductor Company Limited |
| BUV70 | isc Silicon NPN Power Transistor | 1 2 | Inchange Semiconductor Company Limited |
| KSC5030F | isc Silicon NPN Power Transistor | 1 2 | Inchange Semiconductor Company Limited |
Enlace URL |
Patrocinador de Alldatasheet |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Favorito | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved© Alldatasheet.com 2003 - 2012 |
| Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com | Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl |