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2SD1417 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1417 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1417 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 60 V VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=6mA 0.9 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=14mA 1.2 2.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=6mA 1.5 2.5 V ICBO Collector cut-off current VCB=60V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=3A ; VCE=3V 2000 15000 hFE-2 DC current gain IC=7A ; VCE=3V 1000 Switching times ton Turn-on time 0.8 μs tstg Storage time 3.0 μs tf Fall time IB1=-IB2=6mA VCC≈45V ,RL=15Ω 2.5 μs |
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