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2SD2349 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2349 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2349 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=300mA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A 5.0 V VBEsat Base-emitter saturation voltage IC=7A ;IB=1.4A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 83 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=7A ; VCE=5V 6 9 fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 170 pF VF Diode forward voltage IF=7A 1.8 V ts Storage time 12 μs tf Fall time ICP=7A ;IB1=1.4A;fH=15.75kHz 0.7 μs |
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