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2SD1060 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1060 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1060 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=: 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 0.4 V ICBO Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 280 hFE-2 DC current gain IC=3A ; VCE=2V 30 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 100 pF fT Transition frequency IC=1A ; VCE=-5V 30 MHz Switching times ton Turn-on time 0.1 µs ts Storage time 1.4 µs tf Fall time IC=2.0A; IB1= IB2=0.2A 0.2 µs hFE-1 classifications Q R S 70-140 100-200 140-280 |
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