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2SD2390 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD2390 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Darlington Power Transistors 2SD2390 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 150 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=7mA 2.5 V VBEsat Base-emitter saturation voltage IC=7A ;IB=7mA 3.0 V ICBO Collector cut-off current VCB=160V IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=7A ; VCE=4V 5000 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF fT Transition frequency IC=2A ; VCE=12V 55 MHz Switching times ton Turn-on time 0.5 µs ts Storage time 10.0 µs tf Fall time IC=7A;RL=10B IB1=- IB2=7mA VCC=70V 1.1 µs hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 |
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