2SD2095 datasheet(2/3 Pages) SAVANTIC

No. de pieza	2SD2095

Descripción Electrónicos	Silicon NPN Power Transistors

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Fabricante Electrónico	SAVANTIC [Savantic, Inc.]

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2 / 3 page

SavantIC Semiconductor

Product Specification

2

Silicon NPN Power Transistors

2SD2095

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)EBO

Emitter-base breakdown voltage

IE=200mA , IC=0

5

V

VCEsat

Collector-emitter saturation voltage

IC=3.5A; IB=0.8A

3.0

5.0

V

VBEsat

Base-emitter saturation voltage

IC=3.5A; IB=0.8A

1.5

V

ICBO

Collector cut-off current

VCB=500V; IE=0

10

µA

hFE

DC current gain

IC=1A ; VCE=5V

8

fT

Transition frequency

IC=0.1A ; VCE=10V

3

MHz

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz

105

pF

VF

Diode forward voltage

IF=5A

1.6

2.0

V

tf

Fall time

ICP=3.5A ;IB1(end)=0.8A

0.5

1.0

µs

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2SD2095 Datasheet(PDF) 2 Page - Savantic, Inc.

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