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TPA4411M Datasheet(PDF) 2 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
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TPA4411M Datasheet(HTML) 2 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
2 / 30 page www.ti.com 15 14 13 12 11 5 4 3 2 1 C1P PGND C1N NC PVSS INR SDR INL NC OUTR NC − No internal connection 15 14 13 12 11 5 4 3 2 1 C1P PGND C1N NC PVSS INR SDR INL NC OUTR NC − No internal connection TPA4411MRTJ TPA4411RTJ INR INL PGND OUTL PVSS SVSS C1N PVDD SGND A1 B1 C1 D1 A2 A3 A4 SDL SVDD C1P SDR NC-Nointernalconnection NC NC OUTR TPA4411YZH TPA4411 TPA4411M SLOS430E – AUGUST 2004 – REVISED MARCH 2008 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. RTJ (QFN) PACKAGE (TOP VIEW) YZH (WCSP) PACKAGE (TOP VIEW) 2 Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M |
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