1N5226B datasheet(1/3 Pages) CHONGQING

No. de pieza	1N5226B

Descripción Electrónicos	SILICON PLANAR ZENER DIODES

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Fabricante Electrónico	CHONGQING [Chongqing Pingwei Enterprise co.,Ltd]

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

１

1N5221B THRU 1N5272B

SILICON PLANAR ZENER DIODES

FEATURES

·Voltage Range: 2.7V to 110V

·Double siug type construction

MECHANICAL DATA

·Case: Molded plastic

·Epoxy: UL94V-0 rate flame retardant

·Lead: MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color band denotes cathode end

·Mounting position: Any

·Weight: 0.33 grams

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

Absolute Maximum Ratings (Ta=25°C)

SYMBOL

VALUE

units

Zener Current see Table

“Characterstics”

Power Dissipation at Tamb=25°C

Ptot

0.5

1)

W

Junction Temperature

TJ

150

°C

1) Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.

Characteristics at Tamb=25°C

SYMBOL

Min.

Typ.

Max.

units

Forward Voltage at IF=250mA

VF

--

1.2

V

Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.

DO-41

1.0(25.4)

MIN.

.034(0.9)

.028(0.7) DIA.

.205(5.2)

.166(4.2)

1.0(25.4)

MIN.

.107(2.7)

.080(2.0) DIA.

Dimensions in inches and (millimeters)

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