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2SC2235 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2235 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page FEATURES Complementary to 2SA965 MAXIMUM RATINGS (T B A B =25 ℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V B (BR)CBOB I B CB=1mA,IBEB=0 120 V Collector-emitter breakdown voltage V B (BR)CEOB I B CB=10mA,IBBB=0 120 V Emitter-Base breakdown voltage V B (BR)EBOB I B EB=1mA,IBCB=0 5 V Collector cut-off current I B CBOB V B CBB=120V,IBEB=0 0.1 μA Emitter cut-off current I B EBOB V B EBB=5V,IBCB=0 0.1 μA DC current gain h B FEB V B CEB=5V,IBCB=100mA 80 240 Collector-emitter saturation voltage V B CEB(sat) I B CB=500mA,IBBB=50mA 1.0 V Base-emitter voltage V B BEB I B CB=500mA, VBCEB=5V 1.0 V Transition frequency f B TB V B CEB=5V, IBCB=100mA 120 MHz Collector output capacitance Cob V B CEB=10V, IBEB=0 f=1MHz 30 pF CLASSIFICATION OF hFE Rank O Y Range 80 -160 120 -240 Symbol Parameter Value Units V B CBOB Collector-Base Voltage 120 V V B CEOB Collector-Emitter Voltage 120 V V B EBOB Emitter-Base Voltage 5 V I B CB Collector Current -Continuous 0.8 A P B CB Collector Power Dissipation 0.9 W T B JB Junction Temperature 150 ℃ T B stgB Storage Temperature -55to+150 ℃ Elektronische Bauelemente 2SC2235 NPN Silicon General Purpose Transistor http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 6.0±0.2 1.0±0.1 4.9±0.2 3.0±0.1 (1.50 Typ.) 0.50+0.1 –0.1 0.45+0.1 –0.1 1 3 2 1: Emitter 2: Collector 3: Base TO-92 MOD Unit: mm 1.9 –0.1 +0.1 17-May-2007 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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