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2SD1994A Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD1994A Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page Elektronische Bauelemente 2SD1994A NPN General Purpose Transistor 01-December-2008 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 V Collector Current IC 1 A Total Power Dissipation PC 1 W Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector - Base Breakdown Voltage V(BR)CBO 60 - - V IC = 10 μA, IE = 0 Collector - Emitter Breakdown Voltage V(BR)CEO 50 - - V IC = 2 mA, IB = 0 Emitter - Base Breakdown Voltage V(BR)EBO 5 - - V IE = 10 μA, IC = 0 Collector Cut - Off Current ICBO - - 0.1 μA VCB = 20V, IE = 0 Emitter Cut - Off Current IEBO - - 0.1 μA VEB = 5V, IC = 0 hFE(1) 85 - 340 VCE = 10V, IC = 500 mA DC Current Gain hFE(2) 50 - - VCE = 5V, IC = 1 A Collector - Emitter Saturation Voltage VCE(sat) - - 0.4 V IC = 500mA, IB = 50 mA Base - Emitter Saturation Voltage VBE(sat) - - 1.2 V IC = 500mA, IB = 50 mA Transition Frequency f T - 200 - MHz VCE = 10V, IB = 50 mA, f = 200MHz Collector Output Capacitance Cob - - 20 pF VCB = 10V,IE = 0, f = 1MHz CLASSIFICATION OF hFE(1) Rank Q R S Range 85 - 170 120 - 240 170 - 340 TO-92 Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G1.27 TYP. H1.10 - J 2.42 2.66 K 0.36 0.76 1 Emitter 2 Collector 3 Base |
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