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2SD1994A Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

No. de pieza 2SD1994A
Descripción Electrónicos  NPN General Purpose Transistor
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Fabricante Electrónico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SD1994A Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
2SD1994A
NPN
General Purpose Transistor
01-December-2008 Rev. B
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
A
C
E
K
F
D
B
G
H
J
3
Base
1
Emitter
Collector
2
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector - Base Voltage
VCBO
60
V
Collector - Emitter Voltage
VCEO
50
V
Emitter - Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Total Power Dissipation
PC
1
W
Junction, Storage Temperature
TJ, TSTG
+150, -55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector - Base Breakdown Voltage
V(BR)CBO
60
-
-
V
IC = 10 μA, IE = 0
Collector - Emitter Breakdown Voltage
V(BR)CEO
50
-
-
V
IC = 2 mA, IB = 0
Emitter - Base Breakdown Voltage
V(BR)EBO
5
-
-
V
IE = 10 μA, IC = 0
Collector Cut - Off Current
ICBO
-
-
0.1
μA
VCB = 20V, IE = 0
Emitter Cut - Off Current
IEBO
-
-
0.1
μA
VEB = 5V, IC = 0
hFE(1)
85
-
340
VCE = 10V, IC = 500 mA
DC Current Gain
hFE(2)
50
-
-
VCE = 5V, IC = 1 A
Collector - Emitter Saturation Voltage
VCE(sat)
-
-
0.4
V
IC = 500mA, IB = 50 mA
Base - Emitter Saturation Voltage
VBE(sat)
-
-
1.2
V
IC = 500mA, IB = 50 mA
Transition Frequency
f T
-
200
-
MHz
VCE = 10V, IB = 50 mA, f = 200MHz
Collector Output Capacitance
Cob
-
-
20
pF
VCB = 10V,IE = 0, f = 1MHz
CLASSIFICATION OF hFE(1)
Rank
Q
R
S
Range
85 - 170
120 - 240
170 - 340
TO-92
Millimeter
REF.
Min.
Max.
A
4.40
4.70
B
4.30
4.70
C
12.70
-
D
3.30
3.81
E
0.36
0.56
F
0.36
0.51
G1.27 TYP.
H1.10
-
J
2.42
2.66
K
0.36
0.76
1
Emitter
2
Collector
3
Base


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