STBDW42 datasheet(2/3 Pages) SEMTECH_ELEC

No. de pieza	STBDW42

Descripción Electrónicos	NPN Silicon Planar Darlington Power Transistors

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Fabricante Electrónico	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

Página de inicio	http://www.semtech.net.cn

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2 / 3 page

Dated : 22/03/2006

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SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

ST BDW42

Characteristics at TC = 25 OC

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at VCE = 4 V, IC = 5 A

at VCE = 4 V, IC = 10 A

hFE

1000

250

-

Collector Emitter Sustaining Voltage

at IC = 30 mA

VCEO(sus)

100

-

V

Collector Cutoff Current

at VCE = 50 V

at VCE = 100 V

ICEO

-

2

1

mA

Emitter Cutoff Current

at VEB = 5 V

IEBO

-

2

mA

Collector Emitter Saturation Voltage

at IC = 5 A, IB = 10 mA

at IC = 10 A, IB = 50 mA

VCE(sat)

-

2

3

V

Base Emitter on Voltage

at IC = 10 A, VCE = 4 V

VBE(on)

-

3

V

Second Breakdown Collector Current

With Base Forward Biased

1)

at VCE = 28.4 V

at VCE = 40 V

IS/b

3

1.2

A

Current Gain Bandwidth Product

at VCE = 3 V, IC = 3 A, f = 1 MHz

fT

4

-

MHz

Output Capacitance

at VCB = 10 V, f = 0.1 MHz

Cob

-

200

pF

1)

Pulse Test non repetitive: Pulse Width = 250 ms

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