Dated : 27/12/2007
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BC337…BC338
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
These types are subdivided into three groups -16,
-25 and -40, according to their DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
BC337
BC338
Unit
Collector Base Voltage
VCBO
50
30
V
Collector Emitter Voltage
VCEO
45
25
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Peak Collector Current
ICM
1
A
Total Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group
at VCE = 1 V, IC = 300 mA
-16
-25
-40
-16
-25
-40
hFE
hFE
hFE
hFE
hFE
hFE
100
160
250
60
100
170
-
-
-
-
-
-
250
400
630
-
-
-
-
-
-
-
-
-
Collector Base Cutoff Current
at VCB = 50 V
at VCB = 30 V
BC337
BC338
ICBO
-
-
-
-
100
100
nA
Collector Base Breakdown Voltage
at IC = 100 µA
BC337
BC338
V(BR)CBO
50
30
-
-
-
-
V
Collector Emitter Breakdown Voltage
at IC = 2 mA
BC337
BC338
V(BR)CEO
45
25
-
-
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCE(sat)
-
-
0.7
V
Base Emitter On Voltage
at VCE = 1 V, IC = 300 mA
VBE(on)
-
-
1.2
V
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 50 MHz
fT
-
100
-
MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
CCBO
-
12
-
pF
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
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