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2N4037 Datasheet(PDF) 1 Page - Motorola, Inc |
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2N4037 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 4 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 Unit Collector – Emitter Voltage VCEO –65 –40 Vdc Collector – Base Voltage VCBO –90 –60 Vdc Emitter – Base Voltage VEBO – 7.0 – 7.0 Vdc Base Current IB – 0.5 Adc Collector Current — Continuous IC – 1.0 Adc Continuous Power Dissipation at or Below TC = 25°C Linear Derating Factor PD 5.0 28.6 5.0 28.6 Watts mW/ °C Continuous Power Dissipation at or Below TA = 25°C Linear Derating Factor PD 1.0 5.72 1.0 5.72 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to +200 °C Lead Temperature 1/16 ″ from Case for 10 Seconds TL 230 °C THERMAL CHARACTERISTICS Characteristic Symbol 2N4036 2N4037 Unit Thermal Resistance, Junction to Case RqJC 35 35 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Sustaining Voltage(1) (IC = – 100 mAdc, IB = 0) 2N4036 2N4037 VCEO(sus) –65 –40 — — Vdc Collector – Base Breakdown Voltage (IC = – 0.1 mAdc) 2N4037 V(BR)CBO –60 — Vdc Collector Cutoff Current (VCE = – 85 Vdc, VEB = – 1.5 Vdc) 2N4036 (VCE = – 30 Vdc, VEB = – 1.5 Vdc, TC = 150°C) 2N4037 ICEX — — – 0.1 – 100 mAdc Collector Cutoff Current (VCB = – 90 Vdc, IE = 0) 2N4036 (VCB = – 60 Vdc, IE = 0) 2N4037 ICBO — — – 1.0 – 0.25 µAdc Emitter Cutoff Current (VEB = – 7.0 Vdc, IC = 0) 2N4036 (VEB = – 5.0 Vdc, IC = 0) 2N4037 IEBO — — –10 – 1.0 µAdc 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Order this document by 2N4036/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4036 2N4037 CASE 79–04, STYLE 1 TO–39 (TO–205AD) 1 2 3 © Motorola, Inc. 1997 COLLECTOR 3 2 BASE 1 EMITTER |
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