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TPIC2701MJ Datasheet(PDF) 3 Page - Texas Instruments |
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TPIC2701MJ Datasheet(HTML) 3 Page - Texas Instruments |
3 / 15 page TPIC2701 7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over case temperature operating range (unless otherwise noted) (see Note 4) PARAMETER TEST CONDITIONS TC† TPIC2701M UNIT PARAMETER TEST CONDITIONS TC† MIN TYP MAX UNIT V(BR)DS Drain to source breakdown voltage ID = 1 µA, VGS = 0 25 °C 60 V V(BR)DS Drain-to-source breakdown voltage ID = 1 mA, VGS = 0 Full range 60 V VTGS Gate-to-source input threshold voltage ID = 1 mA, VDS = VGS Full range 1.2 1.75 2.4 V VDS( ) Drain to source on state voltage ID =0 5A VGS =15V 25 °C 0.25 0.45 V VDS(on) Drain-to-source on-state voltage ID = 0.5 A, VGS = 15 V Full range 0.65 V IDSS Zero gate voltage drain current VDS =48V VGS =0 25 °C 0.05 1 µA IDSS Zero-gate-voltage drain current VDS = 48 V, VGS = 0 Full range 10 µA IGSSF Forward gate current, drain short-circuited to VGS =20V VDS =0 25 °C 10 100 nA IGSSF g, source VGS = 20 V, VDS = 0 Full range 10 µA IGSSR Reverse gate current, drain short-circuited to VGS =20 V VDS =0 25 °C 10 100 nA IGSSR g, source VGS = – 20 V, VDS = 0 Full range 10 µA rDS( ) Forward drain source on state resistance VGS =15V ID =0 5A 25 °C 0.5 0.9 Ω rDS(on) Forward drain-source on-state resistance VGS = 15 V, ID = 0.5 A Full range 1.3 Ω g fs Forward transconductance VDS = 15 V, ID = 0.5 A 25 °C 0.8 S Ciss Short-circuit input capacitance, common source 105 Coss Short-circuit output capacitance, common source VDS = 25 V, VGS = 0, Full range 65 pF Crss Short-circuit reverse transfer capacitance, common source f = 300 kHz Full range 15 F † Full range is – 55 °C to 125°C. NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal effects must be taken into account separately. source-drain diode characteristics, TC = 25°C PARAMETER TEST CONDITIONS TPIC2701 UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VSD Forward On voltage IS = 0.5 A, VGS = 0 0.9 1.4 V trr(SD) Reverse-recovery time IS = 0.5 A, VGS = 0, VDS = 48 V, 165 ns QRR Total source-drain diode charge SGS di/dt = 25 A/ µs, DS See Figure 1 250 nC source-to-drain diode characteristics over operating case temperature range (unless otherwise noted) (see Note 4) PARAMETER TEST CONDITIONS TPIC2701M UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VSD Forward On voltage IS = 0.5 A, VGS = 0 0.9 1.4 V trr Reverse recovery time IS = 0.5 A, VGS = 0, VDS = 48 V, 165 ns QRR Total source-to-drain diode charge SGS di/dt = 25 A / µs, TC = 25°C, DS See Figure 1 250 nC NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal effects must be taken into account separately. |
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