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TPS2301 Datasheet(PDF) 5 Page - Texas Instruments |
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TPS2301 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 22 page TPS2300, TPS2301 DUAL HOT SWAP POWER CONTROLLER WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS265B – FEBRUARY 2000 – REVISED APRIL 2000 5 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating temperature range (–40 °C < TA < 85°C), 3 V ≤ VI(IN1) ≤13 V, 3 V ≤ VI(IN2) ≤ 5.5 V (unless otherwise noted) general PARAMETER TEST CONDITIONS MIN TYP MAX UNIT II(IN1) Input current, IN1 VI(ENABLE) = 5 V (TPS2301), 0.5 1 mA II(IN2) Input current, IN2 VI(ENABLE) = 0 V (TPS2300) 75 200 µA II(stby) Standby current (sum of currents into IN1, IN2, VI(ENABLE) = 0 V (TPS2301) 5 µA II(stby) y( ISENSE1, ISENSE2, ISET1, and ISET2) VI(ENABLE) = 5 V (TPS2300) 5 µA GATE1 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VG(GATE1_3V) I 500 nA VI(IN1) = 3 V 9 11.5 VG(GATE1_4.5V) Gate voltage II(GATE1) = 500 nA, DISCH1 open VI(IN1) = 4.5 V 10.5 14.5 V VG(GATE1_10.8V) DISCH1 oen VI(IN1) = 10.8 V 16.8 21 VC(GATE1) Clamping voltage, GATE1 to DISCH1 9 10 12 V IS(GATE1) Source current, GATE1 3 V ≤ VI(IN1) ≤ 13.2 V, 3 V ≤ VO(VREG) ≤ 5.5 V, VI(GATE1) = VI(IN1) + 6 V 10 14 20 µA Sink current, GATE1 3 V ≤ VI(IN1) ≤ 13.2 V, 3 V ≤ VO(VREG) ≤ 5.5 V, VI(GATE1) = VI(IN1) 50 75 100 µA VI(IN1) = 3 V 0.5 tr(GATE1) Rise time, GATE1 Cg to GND = 1 nF (see Note 2) VI(IN1) = 4.5 V 0.6 ms () g VI(IN1) = 10.8 V 1 VI(IN1) = 3 V 0.1 tf(GATE1) Fall time, GATE1 Cg to GND = 1 nF (see Note 2) VI(IN1) = 4.5 V 0.12 ms () g VI(IN1) = 10.8 V 0.2 GATE2 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VG(GATE2_3V) Gate voltage II(GATE2) = 500 nA DISCH2 open VI(IN2) = 3 V 9 11.7 V VG(GATE2_4.5V) Gate voltage II(GATE2) = 500 nA, DISCH2 oen VI(IN2) = 4.5 V 10.5 14.7 V VC(GATE2) Clamping voltage, GATE2 to DISCH2 9 10 12 V IS(GATE2) Source current, GATE2 3 V ≤ VI(IN2) ≤ 5.5 V, 3 V ≤ VO(VREG) ≤ 5.5 V, VI(GATE2) = VI(IN2) + 6 V 10 14 20 µA Sink current, GATE2 3 V ≤ VI(IN2) ≤ 5.5 V, 3 V ≤ VO(VREG) ≤ 5.5 V, VI(GATE2) = VI(IN2) 50 75 100 µA t (GATE2) Rise time GATE2 Cg to GND = 1 nF VI(IN2) = 3 V 0.5 ms tr(GATE2) Rise time, GATE2 g (see Note 2) VI(IN2) = 4.5 V VO(VREG) =3V 0.6 ms tf(GATE2) Fall time GATE2 Cg to GND = 1 nF VI(IN2) = 3 V VO(VREG) = 3 V 0.1 ms tf(GATE2) Fall time, GATE2 g (see Note 2) VI(IN2) = 4.5 V 0.12 ms NOTE 2: Specified, but not production tested. |
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Descripción similar - TPS2301 |
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