2SD1441 datasheet(2/3 Pages) JMNIC

No. de pieza	2SD1441

Descripción Electrónicos	Silicon NPN Power Transistors

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Fabricante Electrónico	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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Product Specification

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Silicon NPN Power Transistors

2SD1441

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VEBO

Emitter-base breakdown voltage

IE=500mA; IC=0

5

V

VCEsat

Collector-emitter saturation voltage

IC=3A; IB=1A

1.0

V

VBEsat

Base-emitter saturation voltage

IC=3A; IB=1A

1.5

V

VCB=750V; IE=0

50

μA

ICBO

Collector cut-off current

VCB=1500V; IE=0

1

mA

hFE

DC current gain

IC=3A ; VCE=10V

5

15

ts

Storage time

4

9

μs

tf

Fall time

IC=3A

IBend=1A,LLeak=5μH

0.8

μs

VF

Diode forward voltage

IF=-4A,IB=0

2.2

V

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