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| BU522B |
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MOTOROLA |
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BU522B 3 Motorola Bipolar Power Transistor Device Data 6 0 Figure 2. Sustaining Voltage Test VCER(sus) VCER(sus), COLLECTOR–EMITTER VOLTAGE (VOLTS) 5 4 3 2 1 0 100 200 300 400 500 BU522B t1 to be selected that IC reaches 3 Adc before switch–off Case temperature of the power transistor TC = 25°C Figure 3. S.O.A. Test Clamping device characteristics: VZ = 400 V ± 1% at IZ = 20 mA Clamping duration is around 40 µsec t2 to be selected that IL reaches 5 Adc before switch–off Case temperature of the power transistor: TC = 25°C. 670 A INPUT t1 47 A INDUCTIVE LOAD 1N4148 270 Ω T.U.T. BC337 70 ms VBAT = +16 V 300 µH VOLTAGE PROBE (VCER(sus)) CURRENT PROBE (IC) ~ 0.6 A IC = 3 A 0 V 670 A INPUT t2 47 A INDUCTIVE LOAD 1N4148 270 Ω T.U.T. BC337 70 ms VBAT = +16 V 3 mH VOLTAGE PROBE (VCER(sus)) CURRENT PROBE (IC) 0.6 A IC = 3 A 0 V VZ 1.1 A 0.10 µF 300 V Test conditions of the Collector–Base Clamping Circuit: |
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