Nombre de pieza
         Descripción
BU522B

 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS ( 4 Page)


MOTOROLA
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BU522B
3
Motorola Bipolar Power Transistor Device Data
6
0
Figure 2. Sustaining Voltage Test VCER(sus)
VCER(sus), COLLECTOR–EMITTER VOLTAGE (VOLTS)
5
4
3
2
1
0
100
200
300
400
500
BU522B
t1 to be selected that IC reaches 3 Adc before switch–off
Case temperature of the power transistor
TC = 25°C
Figure 3. S.O.A. Test
Clamping device characteristics:
VZ = 400 V ± 1% at IZ = 20 mA
Clamping duration is around 40
µsec
t2 to be selected that IL reaches
5 Adc before switch–off
Case temperature of the power
transistor: TC = 25°C.
670 A
INPUT
t1
47 A
INDUCTIVE
LOAD
1N4148
270
T.U.T.
BC337
70 ms
VBAT = +16 V
300
µH
VOLTAGE PROBE
(VCER(sus))
CURRENT PROBE (IC)
~ 0.6 A
IC = 3 A
0 V
670 A
INPUT
t2
47 A
INDUCTIVE
LOAD
1N4148
270
T.U.T.
BC337
70 ms
VBAT = +16 V
3 mH
VOLTAGE PROBE
(VCER(sus))
CURRENT
PROBE (IC)
0.6 A
IC = 3 A
0 V
VZ
1.1 A
0.10
µF
300 V
Test conditions of the Collector–Base Clamping Circuit:
1  2  3  4 



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