March 2009

©2009 Fairchild Semiconductor Corporation

FCA35N60 Rev. A

www.fairchildsemi.com

1

SuperFET

TM

FCA35N60

600V N-Channel MOSFET

Features

• 100% avalanche tested

Description

voltage MOSFET family that is utilizing an advanced charge bal-

ance mechanism for outstanding low on-resistance and lower

gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

GS

D

TO-3PN

D

G

S

Thermal Characteristics

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

600

V

Gate-Soure voltage

±30

V

DrainCurrent

35

A

22.2

Drain Current

- Pulsed

(Note 1)

105

A

Single Pulsed Avalanche Energy

(Note 2)

1455

mJ

Avalanche Current

(Note 1)

35

A

Repetitive Avalanche Energy

(Note 1)

31.25

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

20

V/ns

Power Dissipation

312.5

W

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction to Case

-

0.4

Thermal Resistance, Case-to-Heat Sink

0.24

-

Thermal Resistance, Junction to Ambient

-

42

*Drain current limited by maximum junction temperature