©2009 Fairchild Semiconductor Corporation

FDD6796A / FDU6796A_F071 Rev.C1

www.fairchildsemi.com

1

March 2009

FDD6796A / FDU6796A_F071

25 V, 5.7 m

Ω

Features

100% UIL tested

RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using either

synchronous or conventional switching PWM controllers. It has

switching speed.

Applications

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

D

G

S

D

G

S

G

S

D-PAK

(TO-252)

Short-Lead I-PAK

(TO-251AA)

D

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

25

V

Gate to Source Voltage

±20

V

Drain Current -Continuous (Package limited)

40

A

-Continuous (Silicon limited)

67

-Continuous

(Note 1a)

20

-Pulsed

150

Single Pulse Avalanche Energy

(Note 3)

40

mJ

Power Dissipation

42

W

Power Dissipation

(Note 1a)

3.7

Operating and Storage Junction Temperature Range

-55 to +175

°C

Thermal Resistance, Junction to Case

3.6

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

40

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD6796A

FDD6796A

D-PAK (TO-252)

13 ’’

12 mm

2500 units

FDU6796A

FDU6796A_F071

TO-251AA

N/A(Tube)

N/A

75 units