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FDD8647L Datasheet(PDF) 2 Page - Fairchild Semiconductor

No. de pieza FDD8647L
Descripción Electrónicos  N-Channel PowerTrench짰 MOSFET 40 V, 42 A, 9 m廓
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD8647L Datasheet(HTML) 2 Page - Fairchild Semiconductor

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©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
Electrical Characteristics T
J = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
40
V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
31
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
1.0
2.0
3.0
V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25 °C
-6
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 13 A
7.1
9.0
m
VGS = 4.5 V, ID = 11 A
9.9
13.0
VGS = 10 V, ID = 13 A, TJ = 125 °C
10.7
13.6
gFS
Forward Transconductance
VDS = 5 V, ID = 13 A
49
S
Ciss
Input Capacitance
VDS = 20 V, VGS = 0 V,
f = 1 MHz
1230
1640
pF
Coss
Output Capacitance
340
455
pF
Crss
Reverse Transfer Capacitance
55
80
pF
Rg
Gate Resistance
0.9
td(on)
Turn-On Delay Time
VDD = 20 V, ID = 13 A,
VGS = 10 V, RGEN = 6 Ω
816
ns
tr
Rise Time
310
ns
td(off)
Turn-Off Delay Time
19
34
ns
tf
Fall Time
210
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
VDD = 20 V,
ID = 13 A
20
28
nC
Qg
Total Gate Charge
VGS = 0 V to 4.5 V
10
14
nC
Qgs
Gate to Source Charge
3.8
nC
Qgd
Gate to Drain “Miller” Charge
3.1
nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.6 A
(Note 2)
0.75
1.2
V
VGS = 0 V, IS = 13 A
(Note 2)
0.84
1.3
trr
Reverse Recovery Time
IF = 13 A, di/dt = 100 A/µs
28
45
ns
Qrr
Reverse Recovery Charge
15
27
nC
40 °C/W when mounted on a
1 in2 pad of 2 oz copper
96 °C/W when mounted on
a minimum pad
a)
b)
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300
µs, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 15.0 A, VDD = 36 V, VGS = 10.0 V.


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