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FDD8647L Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD8647L Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page www.fairchildsemi.com 2 ©2008 Fairchild Semiconductor Corporation FDD8647L Rev.C Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 40 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C 31 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 2.0 3.0 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C -6 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 13 A 7.1 9.0 m Ω VGS = 4.5 V, ID = 11 A 9.9 13.0 VGS = 10 V, ID = 13 A, TJ = 125 °C 10.7 13.6 gFS Forward Transconductance VDS = 5 V, ID = 13 A 49 S Ciss Input Capacitance VDS = 20 V, VGS = 0 V, f = 1 MHz 1230 1640 pF Coss Output Capacitance 340 455 pF Crss Reverse Transfer Capacitance 55 80 pF Rg Gate Resistance 0.9 Ω td(on) Turn-On Delay Time VDD = 20 V, ID = 13 A, VGS = 10 V, RGEN = 6 Ω 816 ns tr Rise Time 310 ns td(off) Turn-Off Delay Time 19 34 ns tf Fall Time 210 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 20 V, ID = 13 A 20 28 nC Qg Total Gate Charge VGS = 0 V to 4.5 V 10 14 nC Qgs Gate to Source Charge 3.8 nC Qgd Gate to Drain “Miller” Charge 3.1 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.6 A (Note 2) 0.75 1.2 V VGS = 0 V, IS = 13 A (Note 2) 0.84 1.3 trr Reverse Recovery Time IF = 13 A, di/dt = 100 A/µs 28 45 ns Qrr Reverse Recovery Charge 15 27 nC 40 °C/W when mounted on a 1 in2 pad of 2 oz copper 96 °C/W when mounted on a minimum pad a) b) Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 15.0 A, VDD = 36 V, VGS = 10.0 V. |
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