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ST9401 Datasheet(PDF) 1 Page - Stanson Technology |
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ST9401 Datasheet(HTML) 1 Page - Stanson Technology |
1 / 6 page ST9401 ST9401 ST9401 ST9401 P Channel Enhancement Mode MOSFET -3.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST9401 2005. V1 DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN PIN PIN PIN CONFIGURATION CONFIGURATION CONFIGURATION CONFIGURATION SOT-23 SOT-23 SOT-23 SOT-23 1.Gate 2.Source 3.Drain PART PART PART PART MARKING MARKING MARKING MARKING SOT-23 SOT-23 SOT-23 SOT-23 Y: Year Code A: Process Code ORDERING ORDERING ORDERING ORDERING INFORMATION INFORMATION INFORMATION INFORMATION ※ Process Code ∶ A ~ Z ; a ~ z ※ ST9401SRG ∶ S : SOT23 R : Tape Reel ; G : Pb – Free Part Part Part Part Number Number Number Number Package Package Package Package Part Part Part Part Marking Marking Marking Marking ST9401SRG SOT-23 S01YA FEATURE FEATURE FEATURE FEATURE � -20V/-2.8A, RDS(ON) = 85mΩ @VGS = -4.5V � -20V/-2.0A, RDS(ON) = 120mΩ @VGS = -2.5V � Super high density cell design for extremely low R DS(ON) � Exceptional on-resistance and maximum DC current capability � SOT-23 package design 3 3 3 3 1 1 1 1 2 2 2 2 D D D D G G G G S S S S 3 3 3 3 1 1 1 1 2 2 2 2 S01YA S01YA S01YA S01YA |
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