March 2009

©2009 Fairchild Semiconductor Corporation

FDS8638 Rev.C

www.fairchildsemi.com

1

FDS8638

40 V, 18 A, 4.3 m

Ω

Features

100% UIL Tested

RoHS Compliant

General Description

This

N-Channel

MOSFET

is

produced

using

Fairchild

Semiconductor’s advance Power Trench

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Applications

Synchronous Rectifier

Load Switch

SO-8

D

D

D

D

S

S

S

G

Pin 1

G

S

S

S

D

D

D

D

5

6

7

8

3

2

1

4

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

40

V

Gate to Source Voltage

±20

V

Drain Current -Continuous

18

A

-Pulsed

100

Single Pulse Avalanche Energy

(Note 3)

541

mJ

Power Dissipation

(Note 1a)

2.5

W

Power Dissipation

(Note 1b)

1

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

(Note 1)

25

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDS8638

FDS8638

SO-8

13 “

12 mm

2500 units