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TPC6501 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPC6501 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page TPC6501 2006-11-10 3 Base-emitter voltage VBE (V) Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector current IC (A) VBE (sat) – IC IC – VBE 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.4 0.8 1.2 1.6 2.0 2.4 Common emitter Ta = 25°C Single nonrepetitive l IB = 2 mA 0 4 6 8 10 20 30 40 60 10000 0.001 1000 100 10 0.01 0.1 1 10 Ta = 100°C 25 −55 Common emitter VCE = 2 V Single nonrepetitive pulse 0.001 1 0.1 0.01 0.001 0.01 0.1 1 10 25 −55 Ta = 100°C Common emitter IC/IB = 50 Single nonrepetitive pulse 0.001 0.01 0.1 1 10 10 0.1 1 Common emitter IC/IB = 50 Single nonrepetitive pulse Ta = 100°C 25 −55 0 0 0.4 0.8 1.2 1.6 0.4 0.8 1.2 1.6 2.0 Common emitter VCE = 2 V Single nonrepetitive pulse 25 −55 Ta = 100°C |
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Descripción similar - TPC6501 |
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