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TPC8117 Datasheet(PDF) 6 Page - Toshiba Semiconductor

No. de pieza TPC8117
Descripción Electrónicos  Field Effect Transistor Silicon P Channel MOS Type (U-MOS??
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8117 Datasheet(HTML) 6 Page - Toshiba Semiconductor

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TPC8117
2009-09-29
6
t = 10 ms *
1 ms *
VDSS max
−0.1
−1
−10
−100
−0.1
−1
−10
−100
0.1
0.001
0.01
0.1
1
10
100
1000
1
10
100
1000
(2)
(1)
(1)Device mounted on a glass-epoxy board (a)(Note 2a)
(2)Device mounted on a glass-epoxy board (b)(Note 2b)
rth − tw
Single pulse
Pulse width tw (s)
Drain
−source voltage VDS (V)
Safe operating area
ID max (Pulse) *
* Single pulse
Ta
= 25°C
Curves must be derated
linearly with increase in
temperature.


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