TPC8406-H datasheet(8/11 Pages) TOSHIBA

No. de pieza	TPC8406-H

Descripción Electrónicos	Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel竊뢓-Channel Ultra-High-Speed U-MOSIII)

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

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8 / 11 page

TPC8406-H

2009-09-29

8

N-Channel

Drain-source voltage VDS (V)

ID – VDS

Drain-source voltage VDS (V)

ID – VDS

0

10

2

6

4

8

0.2

0

1.0

0.4

0.6

0.8

0

20

4

12

8

16

0.4

0

2.0

0.8

1.2

1.6

Common source

Ta

= 25°C

Pulse test

VGS = 2.6 V

3

3.4

2.7

3.1

6

10

3.8

2.8

2.9

4.5

5

3.2

4

Common source

Ta

= 25°C

Pulse test

VGS = 2.6 V

3.2

3.4

6

10

3.8

2.8

3

4.5

5

3.6

4

0

0.3

0.4

0.5

0

4

6

8

10

12

0.2

0.1

0

1

2

3

10

30

15

20

5

Gate-source voltage VGS (V)

ID – VGS

Gate-source voltage VGS (V)

VDS – VGS

ID = 6.5 A

3.3

1.7

Common source

Ta

= 25℃

Pulse test

25

4

2

Ta

= −55°C

25

100

Common source

VDS = 10 V

Pulse test

6

3

0.1

10

30

300

100

0.1

100

0.1

1

100

10

Drain current ID (A)

RDS (ON) – ID

Drain current ID (A)

⎪Yfs⎪ – ID

1

25

100

Ta

= −55°C

Common source

VDS = 10 V

Pulse test

VGS = 10 V

4.5 V

Common source

Ta

= 25°C

Pulse test

10

100

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TPC8406-H Datasheet(PDF) 8 Page - Toshiba Semiconductor

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