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TPCP8510 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCP8510 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page TPCP8510 2009-07-14 4 rth – tw 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 1000 0.1 10 1 100 0.001 0.01 0.1 1 10 IC max (pulse)※ IC max (continuous) 1ms※ 10ms※ VCEO max 100 μs※ 100ms※* 10 μs※ 10s※* Pulse width tw (s) Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm 2) Collector −emitter voltage VCE (V) Safe operating area *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass-epoxy, 1.6 mm thick, Cu area: 645 mm 2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. DC operation Ta = 25°C |
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